Library · Materials, chemistry & fabrication

What Chemical Etching & Surface Micromachining got wrong, from 53 theses

Summary written by a model from the records below: Chemical etching and surface micromachining processes frequently encounter mechanical failures such as stiction and cracking during sacrificial release, along with selectivity and profile control issues. Fabrication yields are further limited by aspect ratio dependent lag, surface roughening, and chemical degradation of delicate layers. These records come from graduate theses, 2021 to 2026, each labeled with its degree where the repository states it, and each links to its thesis. They were extracted by language models reading the full text, so treat each as a lead to read, not a verdict.

53
theses
12
institutions
63
failure records
7
failure modes

Plus 9 problems the authors left open, listed at the end.

Failure modes, by theses reporting them

Select a mode to jump to its records.

Sacrificial release etching causes structural collapse from capillary stiction and internal stress
11
11 theses · 6 institutions · 11 records
Insufficient etch selectivity leads to mask erosion and destructive attack on underlying layers
11
11 theses · 5 institutions · 12 records
Isotropic etching profiles cause excessive lateral undercutting and destroy adjacent fine features
11
11 theses · 8 institutions · 12 records
Etching induces surface roughness, sidewall sloped tapering, and performance-limiting residues
10
10 theses · 7 institutions · 10 records
Aggressive chemical etchants cause corrosive damage and structural crumbling in delicate thin films
8
8 theses · 5 institutions · 8 records
High aspect ratio structures suffer from transport limitations and etch depth lag in narrow gaps
7
7 theses · 4 institutions · 7 records
Metal-assisted chemical etching exhibits catalyst detours and non-directional porous etching
3
3 theses · 1 institutions · 3 records

Sacrificial release etching causes structural collapse from capillary stiction and internal stress

11 theses · 6 institutions

Capillary forces and surface tension during wet release drying pull suspended membranes and cantilevers into contact with substrates, leading to irreversible stiction and structural failure. Additionally, unrelieved internal film stress, severe solution agitation, and incomplete oxide removal cause suspended structures to warp, crack, or detach at anchor points.

Tried and failed

stress-engineered suspension supports applied to suspended microcavity release etching. Reason: structural collapse caused by stiction failure during release etch

Resonant Spatial Light Modulation: Optical Programming and Sensing at the Fundamental Limit · MIT · PhD

Tried and failed

full-wafer wet etching without pre-dicing applied to silicon micro-oscillator fabrication. Reason: released structures stuck together and shattered during solution agitation

Measurement of phonon angular momentum via the Einstein-de Haas effect, fiber-optic interferometry, and a high-Q oscillator · UT Austin · PhD

Considered and rejected

Considered and rejected: Rejected surface micromachining in favor of SOI bulk micromachining due to high residual stresses causing buckling/cracking and limited displacement.

Development of MEMS-Based Devices for Characterizing 2D Nanomaterials at Low Temperatures · University of Trento · PhD

Tried and failed

wet chemical under-etching for suspended membrane release applied to thin-film diamond photonic crystal membranes. Outcome: unstable. Reason: Capillary forces during wet etching caused thin membranes to collapse and stiction to the underlying substrate

High-Performance Photonic and Acoustic Interfaces for Qubits · Harvard · PhD

Tried and failed

frontside isotropic chemical etching for membrane release applied to suspended piezoelectric thin-film resonators. Outcome: unstable. Reason: unrelieved internal stress caused severe film cracking and substantial structural warpage after release

AlScN-Based Acoustic Resonators Utilizing Piezoelectric and Ferroelectric Effects · Georgia Tech · PhD

Tried and failed

sacrificial isotropic gas etching for suspended membranes applied to integrated microelectronic device electrodes. Reason: incomplete sacrificial layer removal left residues and caused stress-induced cracking in the suspended metal film

Vacuum Transistors Based on III-Nitrides Field Emitter Arrays with Self-Aligned Gate · MIT · PhD

Tried and failed

vapor hydrofluoric acid cavity release etching applied to silicon-on-insulator buried oxide sacrificial layer. Reason: defective or low-quality oxide layer caused uncontrolled lateral etch propagation destroying structural anchors

Integration of MEMS in Silicon Photonics · EPFL · PhD

Tried and failed

evaporated metal oxide sacrificial layer wet release applied to metallic nanostructure transfer to flexible substrates. Reason: thin-film stress caused partial or entire structure dislocation during wet chemical etching

Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography · EPFL · PhD

Tried and failed

sacrificial layer wet etching without sonication applied to microparticle release from layered substrates. Reason: released particles agglomerated instead of dispersing freely into suspension

Scalable development of multiplexed microparticle technologies for optical single-cell barcoding · MIT · PhD

Considered and rejected

Considered and rejected: Rejected liquid/wet etching of RuO2 (e.g., ceric ammonium nitrate) for HAR catalyst removal due to capillary-force-induced pattern collapse during liquid drying

Reducing manufacturing constraints of metal-assisted chemical etching · UT Austin · PhD

Considered and rejected

Considered and rejected: Rejected single-side or standard backside-only KOH wet etching due to ~3 µm misalignment/TTV errors that caused cantilever clamping overhang or incomplete release.

Ultra small biomorphic cantilevers for high-speed atomic force microscopy · EPFL · PhD

Insufficient etch selectivity leads to mask erosion and destructive attack on underlying layers

11 theses · 5 institutions

Wet and dry etchants often lack adequate chemical selectivity, resulting in premature mask stripping, pinhole enlargement, and hard mask degradation. Consequently, etchants attack bonded interfaces, underlying adhesion layers, and functional electrodes, causing delamination and device failure.

Tried and failed

single-sided through-wafer deep reactive-ion etching applied to silicon microfluidic channel fabrication. Reason: mask erosion degraded the etch mask before full wafer penetration

Paving the Way for Reliable Electrospray Propulsion through Materials Science and Design · MIT · PhD

Tried and failed

wet chemical etching of chromium hard masks applied to oxide thin film ion milling. Reason: isotropic wet etching caused severe dimensional bias and feature degradation

Infrared electro-optical modulators leveraging plasmonic and nonlinear materials · UT Austin · PhD

Tried and failed

selective wet chemical etching of semiconductor heterostructures applied to low-arsenic quaternary III-V microcavities. Reason: insufficient etch selectivity due to chemical compositional similarity causes surface damage and degrades optical performance

Scalable development of multiplexed microparticle technologies for optical single-cell barcoding · MIT · PhD

Tried and failed

isotropic wet etching with hard mask applied to submicron semiconductor multilayer patterning. Reason: excessive lateral undercut stripped the protective hard mask entirely at small feature sizes

Mid-infrared ballistic metamaterials and subdiffraction limited photonic funnels · UT Austin · PhD

Tried and failed

selective chemical wet etching for hard mask removal applied to heterogeneous bonded semiconductor substrate. Outcome: unstable. Reason: the acid etchant attacked the underlying bonded interface and substrate material causing severe undercutting

Hybrid germanium-on-zinc selenide platform for photonic integrated circuits in the longwave infrared · UT Austin · PhD

Tried and failed

dopant-selective wet etching using polymer masks applied to degenerately phosphorus-doped silicon. Reason: phosphorus-doped silicon lacked etch-stop behavior, leading to non-selective polymer mask removal

Bottom-up Process Development for High Throughput Electronic Device Fabrication · Georgia Tech · PhD

Tried and failed

dopant-selective wet chemical etching applied to n-type patterned silicon substrates. Outcome: did not generalise. Reason: phosphorus doping lacked the etch selectivity contrast observed with boron doping

Engineering a self-aligned metal-oxide-semiconductor gate stack for nano-modular device fabrication · Georgia Tech · PhD

Tried and failed

selective chemical etching of mold templates applied to intermetallic and semimetal nanowires. Reason: acid selectively etched constituent elements from target compounds causing structural degradation and dissolution

Thermomechanical Nanomolding of Electronic Materials · Cornell · PhD

Tried and failed

two-step chemical wet etching applied to piezoelectric thin films on titanium electrodes. Outcome: unstable. Reason: acid etchants corroded the underlying titanium adhesion layer, causing electrode delamination

Additive Fabrication of Functional Microfluidic Devices · EPFL · PhD

Considered and rejected

Considered and rejected: Rejected SiO2 passivation layers patterned by wet etching because the wet etchant attacked and dissolved the metallic Al electrodes.

Liquid-phase electron microscopy of electrochemical processes: Microcells configuration, corrosion of aluminium current collector and lithium-ion battery cycling · EPFL · PhD

Considered and rejected

Considered and rejected: Rejected pure wet chemical etching of PZT with hot HCl due to Ti adhesion layer corrosion

Additive Fabrication of Functional Microfluidic Devices · EPFL · PhD

Considered and rejected

Considered and rejected: Cl2 ICP-RIE dry etching for Al0.6Sc0.4N patterning was rejected in favor of pure physical Ar Ion Beam Etching (IBE) due to very poor selectivity to photoresist (1:6) and significant etch rate degradation with high Sc doping.

High Scandium concentration AlScN resonators for 5G applications · EPFL · PhD

Isotropic etching profiles cause excessive lateral undercutting and destroy adjacent fine features

11 theses · 8 institutions

Non-directional chemical reactions cause pronounced lateral undercutting beneath etch masks and dielectric layers, leading to electrical shorting and structural weakening. This isotropic removal also strips protective boundaries and destroys adjacent waveguides, microfluidic walls, and suspension springs.

Tried and failed

hydrofluoric acid wet chemical etching applied to optical waveguide fabrication. Reason: isotropic etching degraded cross-sectional profile and poor selectivity reduced waveguide height

Integrated Visible-Light Platforms, Devices, and Systems for Augmented Reality and Beyond · MIT · PhD

Tried and failed

fine nanoscale finger projections on patterned electrodes applied to single-electron transistor gate electrodes. Reason: narrow feature geometry caused lift-off defects and sustained damage from reactive-ion etching undercutting

Nanofabrication, measurement, and microscopy of ~10 nm scale single electron transistors · Imperial · PhD

Tried and failed

deep reactive ion etching applied to bulk refractory metal microchannels. Reason: severe sidewall undercutting caused internal leakage between adjacent fluid channels

Design, fabrication and test of the iridium catalysed electrolysis (ICE) thrusters · Imperial · PhD

Tried and failed

isotropic wet chemical etching of thin dielectric applied to metal-insulator-metal multilayer stack. Reason: severe undercutting of the dielectric spacer layer caused electrical shorting between adjacent metal electrodes

A Microwell-Based Impedance Sensor In Microneedle Shape For Cytokine Detection · Penn · PhD

Considered and rejected

Considered and rejected: Rejected photochemical wet etching because isotropic etch profiles impose severe geometric restrictions on microscale fluidic thruster channels.

Design, fabrication and test of the iridium catalysed electrolysis (ICE) thrusters · Imperial · PhD

Considered and rejected

Considered and rejected: Rejected isotropic wet etching for etching sub-micron pattern features in SiO2 in favor of dry reactive ion etching (RIE with CHF3/Ar) to maintain feature profile and avoid electrical shorting.

Building and Characterizing Graphene Nanomechanical Resonator Networks · University of Oregon · PhD

Considered and rejected

Considered and rejected: Pure SF6 dry etch without fluorocarbon/passivation rejected for high-aspect-ratio couplers due to isotropic etching profiles and residual polymer bridging

Hybrid germanium-on-zinc selenide platform for photonic integrated circuits in the longwave infrared · UT Austin · PhD

Tried and failed

isotropic wet etching for structural suspension applied to integrated photonic waveguides and resonators. Reason: the unmasked wet etchant destroys adjacent narrow waveguide structures during sacrificial layer release

A Heterogeneous Integrated Photonic Platform for High Sensitivity Sensors · Georgia Tech · PhD

Considered and rejected

Considered and rejected: Rejected pure reactive gas etching (e.g., using XeF2 or O2 at elevated temperatures) and wet chemical etching for 2D material patterning because they degrade remaining layers and cause isotropic etch profiles/chemical contamination.

On the electrical stability of 2D material-based field-effect transistors Über die elektrische Stabilität von 2D-materialbasierten Feldeffekttransistoren · TU Wien · PhD

Tried and failed

continuous isotropic gas etching for cavity release applied to suspended membrane over micropillar arrays. Reason: etched structural pillars laterally causing premature membrane release instead of clearing cavity

Capillary-Driven Condensation for Heat Transfer Enhancement in Steam Power Plants · MIT · PhD

Considered and rejected

Considered and rejected: Rejected isotropic wet etching (1:1:1 HF:HNO3:H2O) for mesa isolation due to inconsistent, uncalibrated etch rates, replacing it with anisotropic dry etching and lift-off.

Intercalation-Based Memristors for Temporal Computation and Neuromorphic Architectures · Georgia Tech · PhD

Tried and failed

segmented deep silicon dry etching applied to thick silicon wafer handle layer. Reason: cumulative lateral under-etching destroyed delicate adjacent suspension springs

Mass-Producible Teleoperated Ambulatory Micro-Bots with Energy Harvesting and Video Reconnaissance Capabilities · Cornell · PhD

Etching induces surface roughness, sidewall sloped tapering, and performance-limiting residues

10 theses · 7 institutions

Incomplete dry etch clearing and harsh chemical attacks generate substantial bottom and sidewall roughness along with non-vertical, tapered profiles. These morphological imperfections and residual polymer depositions increase optical and acoustic propagation losses while severely degrading electrical transconductance.

Tried and failed

sidewall metallization liftoff after deep reactive ion etching applied to microfluidic channel electrodes. Reason: channel bottom and sidewall roughness and micromasking caused liftoff failure

CT On A Chip: Enabling High-Resolution Polar In-Situ Data Collection · Georgia Tech · PhD

Lost to a baseline

HEMT transconductance dropped sharply when finger width W was reduced below 2 µm due to sidewall edge damage from wet mesa etching, underperforming 10 µm width devices.

Cryogenic HEMT-based devices and circuits for quantum computing · EPFL · PhD

Lost to a baseline

Femtosecond laser engraving could not achieve high aspect ratios (HAR) typical of Deep Reactive-Ion Etching (DRIE), producing instead 20-degree sloped sidewalls that caused triangular cross-sections for widths <100 µm.

Interlocking modular microfluidic cooling substrates for future high energy physics experiments · EPFL · PhD

Lost to a baseline

Experimental waveguide insertion loss of ~7.2 dB was significantly worse than the simulated loss of ~2 dB due to etching roughness and residues

Flip-chip integrated terahertz quantum cascade lasers · TU Wien · PhD

Tried and failed

low-temperature chlorine inductively coupled plasma etching applied to III-V semiconductor heterostructures. Reason: produced sloped sidewalls with poor etch selectivity and microtrenching defects

On-chip III-V semiconductor network lasers for neuromorphic computing · Imperial · PhD

Tried and failed

fluorine-based dry etching of microresonator coupling gaps applied to semiconductor optical microresonators. Outcome: worse than baseline. Reason: residual polymer deposition in submicron gaps could not be polished away, degrading the quality factor

Hybrid germanium-on-zinc selenide platform for photonic integrated circuits in the longwave infrared · UT Austin · PhD

Tried and failed

grayscale lithography combined with deep reactive-ion etching applied to silicon microchannel 3D profile patterning. Reason: sub-100nm resist thickness non-uniformities caused striations and major etch depth variations

Solid-State Flow Control for Ion Electrospray Propulsion · MIT · PhD

Tried and failed

semi-additive copper plating for transmission lines applied to high-frequency embedded die glass packaging. Outcome: worse than baseline. Reason: over-exposure and over-etching caused metal strip edge roughness, leading to excess transmission line loss

Glass Based Packaging for Beyond 5G Communication · Georgia Tech · PhD

Lost to a baseline

Scattering Q of rectangular OMCs from quasi-isotropic etching reached 4.71 x 10^4, an order of magnitude lower than RIBAE with HSQ-alumina (2.50 x 10^5).

Quantum Optomechanics with Color Centers in Diamond · Harvard · PhD

Lost to a baseline

Suspended AlN-on-diamond acoustic waveguides exhibited higher loss (-50 dB transmission) compared to ridge acoustic waveguides (-22.4 dB transmission) due to modal mismatch and bottom surface roughness from quasi-isotropic etching.

High-Performance Photonic and Acoustic Interfaces for Qubits · Harvard · PhD

Aggressive chemical etchants cause corrosive damage and structural crumbling in delicate thin films

8 theses · 5 institutions

Exposure to strong alkaline or acid solutions leads to wafer embrittlement, thin film dissolution, and insoluble interfacial residue accumulation. In transfer processes, wet etchants corrode and crumble delicate two-dimensional materials and organic polymers, destroying their electronic and mechanical properties.

Tried and failed

single-sided wet etching through wafer applied to silicon microfluidic device fabrication. Reason: prolonged etching caused severe wafer brittleness and very low manufacturing yield

Continuous Antibody Titer Assessment of the Biomanufacturing Process using Nanofluidic Binding Assays · MIT · PhD

Tried and failed

continuous single-solvent alkaline wet etching applied to polymer-masked silicon substrates. Reason: poor polymer solvation and accumulation of insoluble potassium-silica complexes at the interface

Bottom-up Process Development for High Throughput Electronic Device Fabrication · Georgia Tech · PhD

Tried and failed

wet chemical etching of sacrificial layer applied to substrate preparation for epitaxial growth. Reason: residual organic carbon contaminant degraded selective growth during high-temperature annealing

Selective-area molecular beam epitaxial growth towards monolithic 3D integration of dielectrics and semiconductors · UT Austin · PhD

Considered and rejected

Considered and rejected: Rejected PMMA wet-transfer using KOH etching due to crumbling, polymer residue, and chemical deterioration of monolayer MoS2, choosing water-assisted PDMS dry stamping instead

Molybdenum disulphide nanoporous membranes as nanofluidic platforms - large-area engineering and study · EPFL · PhD

Considered and rejected

Considered and rejected: Rejected chemical wet-etching / Raney-type de-alloying (Pt/Al, Pt/Ni, Pt/Zn) for porous Pt due to chemical aggressiveness destroying ultra-thin membranes and toxicity of residual metals.

Nano-scale Glucose Fuel Cells for Energy Harvesting in the Human Body Based on Proton Conduction in Cerium Oxide · MIT · PhD

Considered and rejected

Considered and rejected: Rejected PMMA-assisted wet-etching wafer transfer using KOH/NaOH due to corrosive damage, defect induction, and thin-film crumbling.

2D MoS2 Nanopores: Wafer-scale Fabrication and Monolayer Stability for Long-term Single-Molecule Sensing · EPFL · PhD

Considered and rejected

Considered and rejected: Rejected conventional dry etching or laser writing doping for P3CPT patterning due to severe degradation of polymer electronic properties.

Liquid gated organic devices for sensing applications: from transistors to single molecule break junctions · Politecnico di Torino · PhD

Tried and failed

chemical and plasma oxidation etching applied to laser-machined diamond surfaces. Reason: standard oxidative treatments failed to completely remove the laser-induced amorphous carbon layer

Advances in Instrumentation for Dynamic Nuclear Polarization & Magic-Angle Spinning NMR · MIT · PhD

High aspect ratio structures suffer from transport limitations and etch depth lag in narrow gaps

7 theses · 4 institutions

Narrow trenches and submicron cavities restrict reactant diffusion and fluid flow, creating severe aspect ratio dependent etching lag and incomplete material clearance. These transport constraints produce backpressure, structural cracking, and uneven over-etching of surrounding wider features.

Tried and failed

selective wet chemical etching of oxide cladding applied to sub-200 nm slot waveguide gaps. Reason: insufficient etchant penetration or excessive difficulty clearing narrow sub-200 nm high-aspect-ratio trenches

Scalable Packaging and Integration Solutions for Next-Generation Photonic Systems · MIT · PhD

Tried and failed

single-run deep reactive-ion etching applied to high-aspect-ratio silicon microstructures with varied gap sizes. Reason: aspect-ratio-dependent etching caused narrow gaps to clear too slowly, leading to over-etching and breakage of fine features

Mass-Producible Teleoperated Ambulatory Micro-Bots with Energy Harvesting and Video Reconnaissance Capabilities · Cornell · PhD

Tried and failed

standard commercial foundry dry etching applied to sub-micron photonic crystal hole arrays. Reason: default etch parameters caused oblique sidewalls and incomplete etching at ~200 nm feature sizes

Resonant Spatial Light Modulation: Optical Programming and Sensing at the Fundamental Limit · MIT · PhD

Tried and failed

dry etching of atomic layer deposited alumina applied to bottom contacts in high-aspect-ratio microchannels. Outcome: no signal. Reason: dry etching failed to clear alumina from bottom pads in high aspect ratio channels, blocking electrical contact

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography · EPFL · PhD

Tried and failed

highly diluted selective chemical wet etching applied to semiconductor nanowire surface planarisation. Reason: diffusion-limited reactant transport caused severe surface roughness across macroscopic sample areas

Ultra-scaled III-V Vertical Tunneling Transistors · MIT · PhD

Tried and failed

injection-based solvent etching of sacrificial material applied to high-resistance heterogeneous microchannel networks. Reason: fluid shunting and excessive backpressure caused structural cracking in high-resistance and mismatched-diameter channels

Negative Enrichment of Circulating Tumor Cells Via 3D Printed Microfluidic Device · Georgia Tech · PhD

Considered and rejected

Considered and rejected: Rejected thick photoresist masks (~2 µm) for submicron etching because high-aspect-ratio nanoscale resist features could not achieve sufficient etch resistance.

Scaling In Lithium Niobite: Synaptic Devices for Neuromorphic Computing · Georgia Tech · PhD

Metal-assisted chemical etching exhibits catalyst detours and non-directional porous etching

3 theses · 1 institutions

Catalytic metal patterns can wander or detour during vertical descent, which causes adjacent nanoscale holes and bridges to merge. Sub-optimal process temperatures and non-uniform catalyst deposition also result in undesirable porous layer formation and inconsistent etch depths instead of vertical directional removal.

Tried and failed

gas-phase metal-assisted chemical etching applied to silicon micro- and nanostructuring. Reason: sub-optimal temperatures caused porous layer formation and minimal vertical etching rather than directional removal

Platinum assisted chemical etching of single- and poly-crystalline silicon with applications to templated nanomaterials · UT Austin · PhD

Tried and failed

metal-assisted chemical etching with thin metal catalyst applied to dense high-aspect-ratio hole arrays. Reason: catalyst detoured during vertical descent causing adjacent nanoscale holes and bridges to merge

Integrated photonic devices for trace gas sensing and spectroscopy · UT Austin · PhD

Tried and failed

metal-assisted chemical etching applied to integrated optical waveguides and resonators. Reason: variable catalyst density caused non-uniform etch depths and distorted microstructures

Hybrid germanium-on-zinc selenide platform for photonic integrated circuits in the longwave infrared · UT Austin · PhD

Left open by the authors

Problems the authors named and did not get to.

Left open

Develop a drift compensation method and refine the soft sensor skin fabrication process to reduce inter-unit repeatability errors. Blocker: Requires multi-material 3D printing hardware, wet etching/lamination lab equipment, and physical sensor fabrication

A data-driven method to reduce excessive contact pressure of hand orthosis using a soft sensor skin · Imperial · PhD

Left open

Identify physical failure mechanisms underlying resistance slope changes in Kirigami interconnects during cyclic stretching up to one million cycles. Blocker: Requires fabricated micro-kirigami interconnect samples and physical cyclic stretch-testing apparatus with in situ microscopy or electromechanical characterization.

Conformable neural interfaces : from engineering stretchability at the micro-scale to translational applications · EPFL · PhD

Left open

Replace toxic HF in MACE etching using low-concentration solutions, KOH, or mechanical roughening to fabricate porous silicon contacts. Blocker: Requires a wet chemistry and semiconductor fabrication lab with chemical etching apparatus.

Soft Sensors in digital healthcare monitoring · Imperial · PhD

Left open

Develop a low-electrolyte-concentration cleaning etch to eliminate non-uniform underside surface profiles and residual substrate material on SiC membranes. Blocker: Requires a wet lab, chemical etching equipment, and physical SiC membrane samples.

Integrating Spin Defects with Thin-Film Silicon Carbide Devices · Harvard · PhD

Left open

Investigate substrate undercut etching techniques on commercial CMOS nodes to improve thermal dissipation and tuning efficiency of Bragg grating filters. Blocker: Requires access to advanced semiconductor fabrication facilities and cleanroom etching tools.

CMOS Fabrication-Compatible Bragg Grating Devices and Applications · Georgia Tech · PhD

Left open

Calibrate silicon dioxide etching to reduce sidewall transfer lithography nanoscale feature widths below 100 nm. Blocker: Requires a semiconductor cleanroom and physical nanofabrication/etching equipment (RIE/DRIE).

STL NEMS fabrication, design, and inspection · Imperial · PhD

Left open

Optimize the sacrificial etching process to undercut the InP substrate without damaging QCL and QCD structures. Blocker: Requires a physical semiconductor fabrication cleanroom and wet/dry etching lab equipment

Near- and mid-infrared integrated photonic bio-chemical sensing devices with on-chip spectrometers · UT Austin · PhD

Left open

Resolve fabrication obstacles including lagging, notching, knifing, and passivation during high-aspect-ratio DRIE of 4H-SiCOI substrates. Blocker: Requires a semiconductor cleanroom and DRIE etching equipment to conduct physical microfabrication experiments

Applications of New Materials Systems and Machine Learning Techniques for compensation and Calibration of MEMS · Georgia Tech · PhD

Left open

Perform selective etching of binary nanosphere monolayers using HF or toluene to tune fill-factor and pitch without reactive ion etching. Blocker: Requires a chemistry wet lab and hazardous chemical handling (HF, toluene) for physical nanosphere etching.

The development of scalable, self-assembled, low-cost nanophotonic structures for enhanced photocurrent generation for light-weight, portable, and high-efficiency III-V solar cell · UT Austin · PhD

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